Impact of Top SiO2 interlayer Thickness on Memory Window of Si Channel FeFET with TiN/SiO2/Hf0.5Zr0.5O2/SiOx/Si (MIFIS) Gate Structure

Tao Hu,Xianzhou Shao,Mingkai Bai, Xinpei Jia, Saifei Dai,Xiaoqing Sun,Runhao Han, Jia Yang,Xiaoyu Ke,Fengbin Tian, Shuai Yang,Junshuai Chai,Hao Xu,Xiaolei Wang,Wenwu Wang,Tianchun Ye

arxiv（2024）

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摘要

We study the impact of top SiO2 interlayer thickness on memory window of Si channel FeFET with TiN/SiO2/Hf0.5Zr0.5O2/SiOx/Si (MIFIS) gate structure. The memory window increases with thicker top SiO2. We realize the memory window of 6.3 V for 3.4 nm top SiO2. Moreover, we find that the endurance characteristic degrades with increasing the initial memory window.

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