Two-hole "desorption" mechanism of interstitial-vacancy pair generation visualized by avalanche-like color-center yield in synthetic diamond under ultrashort-pulse laser exposure

OPTICAL MATERIALS(2024)

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摘要
A model sectorial synthetic Ib-diamond plate with a minor concentration of substitutional atomic nitrogen Ccenters was exposed in its bulk by tightly focused 0.2-ps, 525-nm laser pulses, coming at 80 -MHz repetition rate and nJ-level variable pulse energies. Structural conversion into NV- and other carbon vacancy/interstitial-related centers was observed by infrared, optical and 3D confocal photoluminescence (PL) microspectroscopy, exhibiting in the optical range the ultra -broad (UV-near-IR) and smooth (structureless) absorption/photoluminescence spectra. PL intensity measured at the selected 480 and 530-nm wavelengths demonstrates its third power of the corresponding pulse energy dependences ( proportional to E 3 ) and avalanche -like dynamics as a function of laser exposure. Our analysis of electron -hole plasma photoexcitation and related generation of non-thermalized Auger carriers as a function of laser pulse energy ( proportional to E 1/2 and proportional to E 3/2 , respectively) indicates that the known two -hole Auger -induced surface desorption mechanism could be anticipated in bulk diamond for interstitial -vacancy Frenkel pair generation, which rate could be evaluated via structural conversion rate for C -centers. At higher pulse energies tremendous interstitial -vacancy Frenkel pair generation rates could result not only in structural conversion of impurity -based color centers, but also in ultrafast "non -thermal" structural disordering in diamond.
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关键词
Synthetic high-pressure,High-temperature diamond,Femtosecond laser pulses,Photoluminescence,Structural modification of color centers,Non-linear photoexcitation,Hot electron/hole carriers,Two-hole localization
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