Three-dimensional core shell InGaN/GaN heterostructure for color tunable emitters on the aspect ratio controlled GaN nanorods

In the pursuit of developing red, green and blue emitters, comprehension of color tunability in relation to the nanostructure properties is imperative. Hence, we present a systematic study for the fabrication of color tunable emitters based on GaN nanorods (NRs) prepared via two-step etching technique. In the essence of tunable emission wavelength, aspect ratio controlled GaN NRs were employed for the growth of core shell heterostructure of InGaN/GaN multiple quantum wells (MQWs) using MOCVD and the impact of aspect ratio regulation on the emission wavelength modulation was studied. To analyze the role of the GaN NRs aspect ratio in facilitating the tunable emission wavelength, we employed metrological as well as optical characterizations. Photoluminescence spectra results established a direct relation of the aspect ratio to the emission profile of the GaN NRs. Furthermore, power-dependent photoluminescence (PL) and cathodoluminescence (CL) studies clarified the source of the emission, providing confirmation of the active region's exclusive growth on non-polar sidewalls and the absence of polarization-induced fields. Tunneling microscope measurements revealed a direct relation of the GaN NRs aspect ratio to the emission wavelength profile. In conclusion, we studied comprehensively the impact of aspect ratio regulation for the tunable emission wavelength.