Tunneling magnetoresistance effect with controlled spin polarization based on Mn₃ZnN

Abstract Due to groundbreaking advantages, antiferromagnetic offers superior prospects for the next-generation memory devices. However, detecting their Néel vector poses great challenges. Mn3ZnN, an antiperovskite antiferromagnetic, breaks TPτ and Uτ symmetries, exhibiting k-resolved spin polarization at Fermi surface. It’s ideal for electrodes to generate tunneling magnetoresistance (TMR) effects, which hinges on electrode-barrier compatibility. Testing various insulators, we obtained 2000% TMR effects in Mn3ZnN/SrTiO3/Mn3ZnN. Additionally, applying 2% biaxial stress increased the spin polarization to 35.24% in Mn3ZnN, hinting at higher TMR potential. These findings provide valuable insights for experimental and industrial developments in the field of spintronics.