High-Reliability Active Miller Clamp Technique For IGBTs

IGBTs have been widely used in industrial applications as the mainstream power device. In a half bridge configuration, the switched-off IGBT tends to dynamically turn on during turn-on phase of the opposite IGBT, resulting in high losses and system malfunction. This paper proposes a high-reliability active Miller clamp technique for IGBTs, which builds a low impedance path between the gate and ground during the IGBT turn-off phase to prevent parasitic turn-on of the turned-off IGBT. The proposed active Miller clamp technique is designed based on the SMIC 0.18um BCD process. According to simulation results, the low level clamp peak current is 3A and the clamp reference voltage is 2V.