Testbeam results of irradiated SiGe BiCMOS monolithic silicon pixel detector without internal gain layer
arxiv(2024)
Abstract
Samples of the monolithic silicon pixel ASIC prototype produced in 2022
within the framework of the Horizon 2020 MONOLITH ERC Advanced project were
irradiated with 70 MeV protons up to a fluence of 1 x 1016 neq/cm2, and then
tested using a beam of 120 GeV/c pions. The ASIC contains a matrix of 100 μm
pitch hexagonal pixels, readout out by low noise and very fast frontend
electronics produced in a 130 nm SiGe BiCMOS technology process. The dependence
on the proton fluence of the efficiency and the time resolution of this
prototype was measured with the frontend electronics operated at a power
density between 0.13 and 0.9 W/cm2. The testbeam data show that the detection
efficiency of 99.8
becomes 96.5
bias voltage to 300 V provides an efficiency to 99.5
The timing resolution of 20 ps measured before irradiation rises for a proton
fluence of 1 x 1016 neq/cm2 to 48 and 44 ps at HV = 200 and 300 V,
respectively.
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