On the Path to High-temperature Josephson Multi-junction Devices
arxiv(2024)
摘要
We report our progress in the high-temperature superconductor (HTS) Josephson
junction fabrication process founded on using a focused helium ion beam
damaging technique and discuss the expected device performance attainable with
the HTS multi-junction device technology. Both the achievable high value of
characteristic voltage V_c=I_cR_N of Josephson junctions and the ability to
design a large number of arbitrary located Josephson junctions allow narrowing
the existing gap in design abilities for LTS and HTS circuits even with using a
single YBCO film layer. A one-layer topology of active electrically small
antenna is suggested and its voltage response characteristics are considered.
更多查看译文
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要