A revisit from CVD kinetics to CVD reactor: Investigating uniform growth mechanism of polysilicon in a reduction furnace

The uniform growth of polysilicon rods is essential for CVD process in the reduction furnace. Considering the complex interaction of CVD reaction and transport phenomena, the reaction engineering analysis of CVD reaction has been investigated and the requirements for the design and operation of CVD reactor are proposed concerning temperature and species concentrations. Based on the numerical simulation of CVD process in a reduction furnace with 12 pairs of rods, the non-uniform deposition is mainly attributed to the mismatching between the TCS transportation and consumption. Moreover, two measures have been attempted. One is to enhance axial mixing by increasing inlet velocity and the other is to reduce TCS consumption by reducing inlet TCS mole fraction and heat flux at the rod surface. Both measures have been confirmed beneficial for the uniform growth of the polysilicon rods.