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2.5 kV/1.95 GW/cm$^{\text{2}}$ AlGaN/GaN-Based Lateral Schottky Barrier Diodes With a High-k Field Plate to Reduce Reverse Current

Zhizhong Wang,Fuping Huang,Chunshuang Chu,Kangkai Tian,Hehe Gong, Na Sun,Yonghui Zhang,Yongjian Li,Jiandong Ye,Zi-Hui Zhang

IEEE Transactions on Electron Devices（2024）

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