Toward the Understanding on Threshold Voltage Drift Mechanisms in GaN MOSc-HEMTs Through the Influence of Device Architecture
IEEE Transactions on Electron Devices（2024）
关键词
Logic gates,Stress,Degradation,Threshold voltage,Wide band gap semiconductors,Transistors,Transient analysis,C-N acceptor traps,GaNon-Si E-mode MOSc-HEMT,high-voltage bias temperature instability (HVBTI),power device reliability,RON degradation,TCAD simulation,V-TH instabilities
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