Estimation of the band alignment of metal/AlScN interface by HAXPES

Abstract This paper describes the band alignment of metal/AlSc(O)N measured using HAXPES. The band offset was determined by using the difference in binding energy from the core-level to the valence band edge, and the band gap was determined from the energy loss spectrum of photoelectrons. The introduction of oxygen into AlScN to make AlScON decreases both the conduction band and valence band band band offsets. The change in the barrier height of the metal/AlScN structure is very small relative to the difference in the work function of the metal. This suggests that pinning occurs at the metal/AlScN interface. Furthermore, the results suggest that the band offset of the metal/AlScN changes when the AlScN layer is polled.