Island-ohmic-PGaN gate HEMT: Toward steep subthreshold swing and enhanced threshold stability

Xinyue Dai,Qimeng Jiang,Chao Feng,Zhongchen Ji,Sen Huang, Xinguo Gao,Xinhua Wang,Xinyu Liu

IEEE Electron Device Letters（2024）

引用 0|浏览1

暂无评分

摘要

An Island-Ohmic p -GaN gate (IO-PGaN) structure is proposed and fabricated on a GaN-on-Si wafer. Compared to the conventional Schottky- gate p -GaN HEMTs, the “floating” p -GaN layer is connected with the gate terminal via the heavily doped p +-GaN island in the IO-PGaN devices. A JFET-like structure formed by the Schottky-metal/ p -GaN junction delivers a self-limited gate leakage. The proposed IO-PGaN HEMT alleviates the performance trade-off between the Ohmic- and Schottky gate technologies, delivering a limited gate leakage and a stable V _TH under gate/drain voltage stress conditions. Moreover, a TCAD simulation result and an energy band diagram are provided to illuminate the principle of enhanced V _TH stability of IO-PGaN devices.

查看译文

关键词

p-GaN gate HEMT,threshold voltage shift,leakage current

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要