Plotting philosophy picture of uniaxial magnetic anisotropy in arsenide and phosphide dilute ferromagnetic semiconductors

In this work, we performed a systematic investigation on the comparison of magnetic anisotropy between three III-Mn-V dilute ferromagnetic semiconductors (Ga,Mn)As, (In,Mn)As and (Ga,Mn)P prepared by ion implantation and pulsed laser melting. Compressive strain induces in-plane magnetic anisotropy in (Ga,Mn)As and (Ga,Mn)P, while out-of-plane magnetic anisotropy is present in (In,Mn)As due to tensile strain introduced by Mn substitution. Interestingly, all materials prepared herein does not present strong in-plane uniaxial anisotropy, between [110] and [11¯0] directions, which always exhibits in low temperature molecular beam epitaxy (LT-MBE) grown (Ga,Mn)As samples. The reason is ascribed to the fact that the ultra-fast recrystallization induced by pulsed laser melting weakens the formation of Mn-Mn dimers along the [11¯0] direction which presents in LT-MBE grown (Ga,Mn)As.