Monolithic n-Type Metal-Oxide-Semiconductor Inverter Integrated Circuits Based on Wide and Ultrawide Bandgap Semiconductors

Wide bandgap (WBG) and ultrawide bandgap (UWBG) semiconductors in n-type metal-oxide-semiconductor (n-MOS) integrated circuits (ICs) are increasingly being explored for their potential applications in the rapidly developing field of electronics. This review comprehensively examines the role of n-MOS inverters underpinned by WBG and UWBG semiconductors and their application possibilities. It delves into various n-MOS inverter topologies, including resistive, enhancement or diode-load, depletion-load, and pseudo-complementary MOS inverter topologies. Each topology's operational principles, unique advantages, and potential performance are elucidated in detail. Finally, these topologies are simulated using the Advanced Design System software for a fair comparison between various topologies. The literature and simulation results show that the pseudo-D topology has the best gain and improved noise margin. The review methodology involves an extensive exploration of WBG/UWBG n-MOS inverters to advance the current understanding of WBG/UWBG n-MOS-based ICs. This review delves into n-type metal-oxide-semiconductor (n-MOS) inverter integrated circuits within wide and ultrawide bandgap semiconductors, emphasizing the significant challenges in their development, particularly the absence of reliable p-type materials for seamless monolithic integration. It explores the operational principles, advantages, and performance of different n-MOS inverter topologies, including resistive load, depletion load, and pseudo-complementary MOS inverters.image (c) 2024 WILEY-VCH GmbH