Volatile and thermally stable tungsten organometallic complexes (RCp)W(CO)2(η3-2-tert-butylallyl) as potential thin film deposition precursor

Two organometallic tungsten complexes (RCp)W(CO)2(η3-2-tert-butylallyl) (R = methyl or ethyl, Cp = cyclopentadienyl) as precursors capable of growing tungsten-containing thin films, are constructed bearing heteroleptic ligand system. The syntheses adopt a rationally designed approach excluding the use of extreme conditions and involving facile purification procedures. The two complexes are authenticated by nuclear magnetic resonance (NMR) and elemental analysis, as well as Fourier transform-infrared (FT-IR) spectroscopy. Thermal property evaluations, including thermogravimetric and vapor pressure tests, reveal favorable thermal stability and volatility which are essential for a typical ALD process. It is noteworthy that both precursors possess relatively low-melting point and specifically, the one bearing ethyl-Cp group is in liquid phase at room temperature. Such design concept of heteroleptic ligand system and substructure tuning pave the way to develop liquid precursors which are imperative demand in microelectronic industry.