Realistic Fröhlich Scattering and Mobility of 2D Semiconductors in van der Waals Heterostructure
arxiv(2024)
Abstract
Two-dimensional (2D) semiconductors have demonstrated great potential for
next-generation electronics and optoelectronics. Their atomic thinness
facilitates the material design for desirable electronic properties when
combined with other 2D materials in van der Waals (vdW) heterostructure.
Although the carrier mobility has been well studied for suspended 2D
semiconductors via first-principles calculation recently, it is not clear how
they are affected by surrounding materials. In this work, we propose a model to
consider the Fröhlich scattering, an important scattering in polar materials
from polar-optical (PO) phonons, in vdW heterostructures. Exemplified by InSe
surrounded by h-BN, we found the InSe Fröhlich mobility can be enhanced about
2.5 times by environmental dielectric screening and coupled PO phonons in vdW
heterostructures. More interestingly, the strong remote PO phonons can enhance
the InSe mobility instead of deteriorating it once considering the PO phonons
coupling. Then several quantities of surrounding dielectrics are proposed to
optimize the InSe Fröhlich mobility, and then used for filtering potential 2D
dielectric materials. Our work provides efficient calculation tools as well as
physical insights for carrier transport of 2D semiconductors in realistic vdW
heterostructures.
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