Aging Reliability Compact Modeling of Trap Effects in Power GaN HEMTs

This article proposes an aging reliability compact model with high accuracy to simulate trap effects after long-term aging in power Gallium Nitride (GaN) based high electron mobility transistors (HEMTs). Dynamic on-state resistance (Ron,dy) caused by trap effects is taken as an example to deliver the aging reliability modeling concepts and flows. Based on the mechanism of trap effects and accelerated-stress experiments, the variation model of electron mobility has been established, so that the degradation of Ron,dy after aging can be predicted. The structure of the advanced SPICE model for GaN HEMT (ASM-HEMT) is modified to integrate the mobility variation model into SPICE for convenient usage. In addition, the accuracy of the proposed model has been verified, and the RMSE value between measured data and simulated data under long-term high temperature reverse bias stress conditions is only 1.68%, thus the hazard of the power system caused by traps can be discovered and avoided in advance.