Optimization of packaging process in Ag sintering for ultra-reliable SiC based power electronics

Experimental investigation was performed in this paper to optimize the packaging process and parameters in the pressure-assisted Ag sintering in the development of an ultra-reliable Silicon Carbide (SiC) based power module. The packaging process from wafer to active metal brazed (AMB) substrate assembly was studied in this work. Ag sintering film transfer and die attach were identified as the two key processes and the parameters were optimized by the Taguchi method. AMB substrate assembly with SiC dies was fabricated using these optimal parameters. Shear tests showed that a good bonding quality between SiC die and AMB substrate was achieved by Ag sintering. The key packaging process and parameters were identified and optimized through this work and pressure-assisted Ag sintering platforms were established for ultra-reliable SiC based power electronics.