High-quality β-(AlxGa1-x)2O3 thin films on sapphire substrate by face-to-face annealing

Songhao Wu, Chicheng Ma,Han Yang, Zichun Liu, Yuanxiao Ma, Ran Yao,Yiyun Zhang,Hua Yang,Xiaoyan Yi, Junxi Wang,Yeliang Wang

CrystEngComm（2024）

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摘要

High-quality β-(AlxGa1-x)2O3 thin film is fabricated through a face-to-face annealing on sapphire substrate covered by epitaxial Ga2O3. Al atoms during the high-temperature annealing are uniformly diffused from the sapphire substrate...

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