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A Decoupled Junction Temperature and Aging Level Evaluating Method for SiC MOSFETs

IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS(2024)

Cited 1|Views4
Key words
Aging,Silicon carbide,Resistance,MOSFET,Logic gates,Junctions,Wires,Aging levels,junction temperature,reliability,SiC MOSFETs,state evaluating
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