Modification of Cu Oxide and Cu Nitride Films by Energetic Ion Impact
Quantum Beam Science(2024)
摘要
We have investigated lattice disordering of cupper oxide (Cu2O) and copper nitride (Cu3N) films induced by high- and low-energy ion impact, knowing that the effects of electronic excitation and elastic collision play roles by these ions, respectively. For high-energy ion impact, degradation of X-ray diffraction (XRD) intensity per ion fluence or lattice disordering cross-section (YXD) fits to the power-law: YXD = (BXDSe)NXD, with Se and BXD being the electronic stopping power and a constant. For Cu2O and Cu3N, NXD is obtained to be 2.42 and 1.75, and BXD is 0.223 and 0.54 (kev/nm)−1. It appears that for low-energy ion impact, YXD is nearly proportional to the nuclear stopping power (Sn). The efficiency of energy deposition, YXD/Se, as well as Ysp/Se, is compared with YXD/Sn, as well as Ysp/Sn. The efficiency ratio RXD = (YXD/Se)/(YXD/Sn) is evaluated to be ~0.1 and ~0.2 at Se = 15 keV/nm for Cu2O and Cu3N, meaning that the efficiency of electronic energy deposition is smaller than that of nuclear energy deposition. Rsp = (Ysp/Se)/(Ysp/Sn) is evaluated to be 0.46 for Cu2O and 0.7 for Cu3N at Se = 15 keV/nm.
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关键词
lattice disordering,sputtering,electronic excitation,elastic collision,energy deposition efficiency
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