Modification of Cu Oxide and Cu Nitride Films by Energetic Ion Impact

We have investigated lattice disordering of cupper oxide (Cu2O) and copper nitride (Cu3N) films induced by high- and low-energy ion impact, knowing that the effects of electronic excitation and elastic collision play roles by these ions, respectively. For high-energy ion impact, degradation of X-ray diffraction (XRD) intensity per ion fluence or lattice disordering cross-section (YXD) fits to the power-law: YXD = (BXDSe)NXD, with Se and BXD being the electronic stopping power and a constant. For Cu2O and Cu3N, NXD is obtained to be 2.42 and 1.75, and BXD is 0.223 and 0.54 (kev/nm)−1. It appears that for low-energy ion impact, YXD is nearly proportional to the nuclear stopping power (Sn). The efficiency of energy deposition, YXD/Se, as well as Ysp/Se, is compared with YXD/Sn, as well as Ysp/Sn. The efficiency ratio RXD = (YXD/Se)/(YXD/Sn) is evaluated to be ~0.1 and ~0.2 at Se = 15 keV/nm for Cu2O and Cu3N, meaning that the efficiency of electronic energy deposition is smaller than that of nuclear energy deposition. Rsp = (Ysp/Se)/(Ysp/Sn) is evaluated to be 0.46 for Cu2O and 0.7 for Cu3N at Se = 15 keV/nm.