A mid-infrared Brillouin laser using ultra-high-Q on-chip resonators
arxiv(2024)
摘要
Ultra-high-Q optical resonators have facilitated recent advancements in
on-chip photonics by effectively harnessing nonlinear phenomena providing
useful functionalities. While these breakthroughs, primarily focused on the
near-infrared region, have extended interest to longer wavelengths holding
importance for monitoring and manipulating molecules, the absence of
ultra-high-Q resonators in this region remains a significant challenge. Here,
we have developed on-chip microresonators with a remarkable Q-factor of 38
million, surpassing previous mid-infrared records by over 30 times. Employing
innovative fabrication techniques, including the spontaneous formation of
light-guiding geometries during material deposition, resonators with internal
multilayer structures have been seamlessly created and passivated with
chalcogenide glasses within a single chamber. Major loss factors, especially
airborne-chemical absorption, were thoroughly investigated and mitigated by
extensive optimization of resonator geometries and fabrication procedures. This
allowed us to access the fundamental loss performance offered by doubly
purified chalcogenide glass sources, as demonstrated in their fiber form.
Exploiting this ultra-high-Q resonator, we successfully demonstrated Brillouin
lasing on a chip for the first time in the mid-infrared, with a threshold power
of 91.9 μW and a theoretical Schawlow-Townes linewidth of 83.45 Hz, far
surpassing carrier phase noise. Our results showcase the effective integration
of cavity-enhanced optical nonlinearities into on-chip mid-infrared photonics.
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