Asymmetric and Double-Layered Gate-All-Around Structures of 1T-DRAM for Sensing Margin and Retention Improvement
IEEE TRANSACTIONS ON ELECTRON DEVICES（2024）
关键词
Sensors,Logic gates,Silicon,Radiative recombination,Charge carrier processes,Silicon germanium,Random access memory,Capacitorless,gate-all-around (GAA),one transistor-dynamic random access memory (1T-DRAM),retention,sensing margin,silicon germanium (SiGe)
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