Extending the Defect Tolerance of Halide Perovskite Nanocrystals to Hot Carrier Cooling Dynamics

Defect tolerance is a critical enabling factor for efficient lead-halide perovskite materials, but the current understanding is primarily on band-edge (cold) carriers, with significant debate over whether hot carriers (HCs) can also exhibit defect tolerance. Here, this important gap in the field is addressed by investigating how internationally-introduced traps affect HC relaxation in CsPbX3 nanocrystals (X = Br, I, or mixture). Using femtosecond interband and intraband spectroscopy, along with energy-dependent photoluminescence measurements and kinetic modelling, it is found that HCs are not universally defect tolerant in CsPbX3, but are strongly correlated to the defect tolerance of cold carriers, requiring shallow traps to be present (as in CsPbI3). It is found that HCs are directly captured by traps, instead of going through an intermediate cold carrier, and deeper traps cause faster HC cooling, reducing the effects of the hot phonon bottleneck and Auger reheating. This work provides important insights into how defects influence HCs, which will be important for designing materials for hot carrier solar cells, multiexciton generation, and optical gain media.