Silicon-Germanium Sourced Dopingless Nanowire Tunnel Field Effect Transistor Based Oxygen Gas Sensor with Improved Sensitivity
crossref(2024)
Abstract
Abstract In this paper, a transducer sensor based on a Charge Plasma Nanowire Tunnel Field Effect Transistor is proposed for the detection of Oxygen (O2) gas using a Silicon Germanium (SiGe) sourced structure (SiGe-CP-NW-TFET). The electrical performances of SiGe-sourced Charge Plasma Nanowire Tunnel Field Effect Transistor (SiGe-CP-NW-TFET) have been compared with Charge Plasma Nanowire Tunnel Field Effect Transistor (CP-NW-TFET). The electrical parameters considered are ION, IOFF, ION/IOFF, Subthreshold slope (SS), and threshold voltage (Vt). The SiGe-CP-NW-TFET has better electrical performance as compared to SiGe-CP-NW-TFET. Further, the device characteristics like electric field, electric potential, charge carriers, and energy band diagram of both the devices have also been compared. The fundamental physics of the presented sensor is also explored from an exhaustive electrostatic investigation of the tunnelling junction in the context of gas molecule adsorption. The impact of device parameters of the proposed SiGe-CP-NW-TFET on electrical performance has also been studied. The device parameters considered are oxide thickness, extended gate length, silicon film thickness, and molar concentration of SiGe at the source side. The impact of oxide thickness, extended gate length, the radius of NW, and the concentration of SiGe (molar) at the source side on the sensitivity of the O2 gas sensor has been analysed. The proposed O2 gas sensor has a current ratio of 3.65×107 and a subthreshold slope of 58.23 mV/decade.
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