A 7 GHz ERBW 1.1 GS/s 6-bit PVT Tolerant Asynchronous Charge-Injection SAR With Only 8.5 fF Input Capacitance in 28 nm CMOS.Jongho Kim, Gyuchan Cho,Jintae KimIEEE J. Solid State Circuits(2024)引用 0|浏览0暂无评分AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要