WS_2 Monolayer Integration in a FAPbI_3-based Heterostructure
arxiv(2024)
Abstract
Incorporating a monolayer of WS_2 via interface engineering enhances the
overall physical properties of a FAPbI3 perovskite based heterostructure.
FAPbI_3/WS_2/TiO_2/ITO and FAPbI_3/TiO_2/ITO heterostructures were
analyzed by UV-Vis spectroscopy, X-ray diffraction, scanning electron
microscopy and atomic force microscopy. The configuration with WS_2
interlayer presents higher absorption in the visible region with a bandgap of
1.44 eV. WS_2 also enhances the deposition process of FAPbI_3,
resulting in the formation of pure photoactive α-phase without the
non-photoactive δ-phase nor residual plumbates. The incorporation of the
monolayer improves the crystalline structure of the FAPbI_3, promoting a
preferential growth in the [100] direction. The smooth surface of WS_2 favors
a homogeneous morphology and an increase of the grain size to 4.5 μm, the
largest reported for similar structures. Furthermore, the work function
obtained lets us propose an enhance an adequate energy band alignment between
FAPbI_3 and the n-type layers for the electron flux to the cathode. These
findings strongly suggest that the interfacial coupling of FAPbI_3/WS_2
could be a promising candidate in photovoltaic applications.
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