Ultra-low RIN, low threshold AlGaInAs/InP BH-DFB laser

This work conducted a comparative study on DFB lasers based on AlGaInAs/InP heterostructures, and comparatively studied the effects of different trench shapes and different cavity lengths on the laser output characteristics. Based on the vertical trench structure, we obtained a laser output of 90mW at 25°C, Compared with the trenchless laser, the output power was increased to 3.6 times the original, and the threshold current was only 4mA. It allows 8.5nm wavelength tunability within the temperature range of 5-85℃, and still has an edge mode suppression ratio of >45dB at 85℃. After the chip is packaged in a butterfly shape, the relative intensity noise in the 0-40 GHz frequency range is lower than -162.8dB/Hz at the working current of 300mA.