Single-Event Transient Study of Ga₂O₃ Rectifiers

Ani Khachatrian, Stephen J. Pearton,Fan Ren,Adrian Ildefonso,Joel Hales,Dale McMorrow

IEEE Transactions on Nuclear Science（2024）

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摘要

Single-event effects studies are carried out on Ga ₂ O ₃ vertical rectifiers using ultrafast laser pulses. Two-photon absorption technique at 350 nm laser wavelength is used to determine how the device transient response changes with deposited charge, bias, and the presence of defects. Pulsed-laser single-event measurements on Ga ₂ O ₃ devices show that increased reverse bias and growth-related defects lead to enhanced single-event transients.

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关键词

gallium oxide rectifiers,wide-band-gap semiconductors,pulsed-laser single-event effect,two-photon absorption,single-event transient,charge deposition,charge collection,charge collection efficiency

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Single-Event Transient Study of Ga2O3 Rectifiers

Single-Event Transient Study of Ga₂O₃ Rectifiers