Flexible Resistive Memory Device with Egg-Albumen/HfOx Hybrid Bilayer: Fabrication and Modeling of its Switching Variations

Abstract Egg-albumen, a natural polymer, in bilayer combination with ultrathin HfOx is explored as an active switching layer component in flexible resistive random access memory devices. The fabricated devices have shown excellent switching characteristic with current on-off ratio of greater than 10^4, stable retention of both the low resistance and high resistance states, reliable multiple cycle switching, and very low switching power (with set power as 0.5 μW and reset power as 3.1 mW). To investigate the electro-mechanical stability, devices were bent with different bending radii and it was found that negligible degradation in device performance was observed till 5 mm bending radius. Furthermore, a simple mathematical model is used to simulate the devices’ characteristic and the values of fitting parameters were extracted with a root mean square error of less than 4.5%. Moreover, switching variation was introduced by utilizing variations of physical parameters, and a near practical physics based mathematical device model is demonstrated which can enable to strengthen simulation capabilities for exploration of unique flexible resistive memory devices and related circuits.