Highly stable and sensitive broadband photodetector based on BA2MAPb2I7/Si heterojunction

Quasi-2D perovskites have gained significant attention as promising two-dimensional materials for optoelectronic applications. They offer unique optical and electrical properties as well as enhanced stability compared to their 3D counterparts. In this study, we present the successful fabrication of a novel photodetector based on a BA2MAPb2I7/Si heterojunction. The optoelectronic properties of the BA2MAPb2I7/Si-based photodetector demonstrate its high sensitivity across a broad range of incident wavelengths spanning from 365 nm to 850 nm. Notably, the fabricated device exhibits an exceptional responsivity of 3.53 A/W for 850 nm radiation, surpassing the typical few mA/W responsivities achieved by a majority of previously reported perovskite-based vertical photodetectors. Furthermore, the device shows a rapid response of approximately 25.9 ris. These results highlight the potential of our fabrication approach to realize highly sensitive broadband photodetectors using a simple and cost-effective process, making them suitable for integration with Si-based electronics.