Impact of Parasitic Gate Capacitance on RF Performance in GaN-Based HEMTs for X-Band ApplicationsSung-Jae Chang,Hyeon-Seok Jeong,Hyun-Wook Jung, Su-Min Choi,Il-Gyu Choi,Youn-Sub Noh,Seong-Il Kim,Sang-Heung Lee,Ho-Kyun Ahn,Dong-Min Kang,Dae-Hyun Kim,Jong-Won LimECS Meeting Abstracts(2023)引用 0|浏览1AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要