Ferroelectric Switching Behavior in Two-Dimensional Semiconductor α-In2Se3 for Nonvolatile Memory
ACS APPLIED ELECTRONIC MATERIALS(2024)
摘要
Ferroelectric memristors, a type of nonvolatile resistive switching memory, have enormous potential in applications, including information storage and neuromorphic computing. The recent focus on two-dimensional (2D) ferroelectrics highlights their significance as a promising platform for the next generation of functional electronic devices. Here, we report ferroelectricity in exfoliated 2D alpha-In2Se3 flakes through piezoelectric force microscopy and transport measurement. An out-of-plane ferroelectricity is directly characterized by a box-in-box ferroelectric domain pattern. In-plane ferroelectricity is also proved in alpha-In2Se3 planar ferroelectric devices by the large hysteresis loop, while the out-of-plane ferroelectricity is further observed by the electric field gating effect. Remarkably, this 2D alpha-In2Se3-based ferroelectric semiconductor field-effect transistor exhibits a high on/off ratio as well as good cyclability. Additionally, few-layer graphene/alpha-In2Se3/few-layer graphene ferroelectric heterojunctions are also fabricated, which showcase the potential of alpha-In2Se3 for vertical ferroelectric memristors.
更多查看译文
关键词
two-dimensional materials,ferroelectric,alpha-In2Se3,memory,vdW heterostructures
AI 理解论文
溯源树
样例
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要