Structural and microwave dielectric properties of LiZnSbO₄ ceramcis for dielectric resonator antenna applications

New microwave dielectric ceramics of LiZnSbO4 were prepared by the reactive sintering method. Within the sintering temperature zone of 1350 degrees C-1385 degrees C, a single-phase LiZnSbO4 with an orthorhombic structure was identified by XRD refinement, which contains 10 molecular formula per unit cell (i.e., Z=10). The relative density and average grain size had a main effect on epsilon(r) and Q x f value of the LiZnSbO4 ceramics, whereas the phase assemblage was responsible for its tau(f). The 1375 degrees C-sintered LiZnSbO4 specimens owned comparable low epsilon(r) similar to 6.5, but ultra-high Q x f similar to 74,500GHz (nearly three times) compared to LiZnPO4 and LiZnVO4 ultra-high Q x f similar to 74,500GHz (nearly three times) compared to LiZnPO4 and LiZnVO4 manufactured, which showed a return loss as low as 37.4dB, maximum gain of 5.7dB and a fractional bandwidth of 3.9% (11.95-12.43GHz).