Voltage-controlled magnetic anisotropy effect through a high-k MgO/ZrO2/MgO hybrid tunneling barrier
APPLIED PHYSICS EXPRESS(2024)
Abstract
We investigated the voltage-controlled magnetic anisotropy (VCMA) effect in epitaxial magnetic tunnel junctions (MTJs) with a hybrid MgO/ZrO2/MgO tunnel barrier. A metastable cubic ZrO2(001) thin film was successfully grown on a MgO(001) layer, leading to the high dielectric constant of 26.5. Using the hybrid tunneling barrier, we achieved the large VCMA coefficient of -350 fJ V(-1)m(-1), which is 70% larger than that observed in the magnetic tunnel junction with the single MgO barrier. Introduction of crystalline high-k dielectric tunneling barrier can open up new pathways to improving the VCMA properties in MTJs for voltage-driven spintronic devices.
MoreTranslated text
Key words
voltage-controlled magnetic anisotropy,magnetoresistance,magnetic tunnel junction,High-k material
AI Read Science
Must-Reading Tree
Example
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined