Electrically sign-reversible topological Hall effect in a top-gated topological insulator (Bi,Sb)2Te3 grown on europium iron garnet

The topological Hall effect (THE), an electrical transport signature of systems with chiral spin textures like skyrmions, has been observed recently in topological insulator (TI) -based magnetic heterostructures. The strong spin -orbit coupling and the broken spatial inversion symmetry in such heterostructures could lead to a sizable interfacial Dzyaloshinsky-Moriya interaction, favorable for skyrmion formation and pronounced THE. However, the intriguing interplay between the topological surface state (TSS) and THE is yet to be fully understood. In this work, we report an unprecedentedly large THE signal of similar to 10 Q (similar to 4 mu O cm at 2 K) with an electrically reversible sign in a top -gated 4 nm TI (Bi0.3Sb0.7)2Te3 (BST) grown on a ferrimagnetic insulator (FI) europium iron garnet (EuIG). The dependence of THE on temperature, external magnetic field angle, and gate bias was investigated and is consistent with the prediction of a skyrmion-driven THE, amenable to elucidate the origin of THE that occurred in TI -based heterostructures. Moreover, a sign change in THE was discovered as the Fermi level was tuned electrically from the upper (electron -doped region) to the lower parts (hole -doped region) of the gapped BST Dirac cone and vice versa. We show that the exploitation of the TSS features has led to a sign -reversal of THE repeatedly in a TI/FI top -gate stack. This discovery may impact technological applications in ultralow power skyrmion-based spintronics.