Study of InP/GaP Quantum Wells Grown by Vapor Phase Epitaxy
TECHNICAL PHYSICS LETTERS(2023)
摘要
We consider structure with single quantum well InP 5 nm thick grown by vapor phase epitaxy on n-GaP wafer. By classical capacitance-voltage profiling of Schottky diode on sample and electrochemical profiling, electron accumulation were detected in InP layer so existence of quantum well is confirmed. Results of admittance spectroscopy and deep-level transient spectroscopy showed defect formation in GaP layers above InP with energy position of Ec-0.21, 0.30 and 0.93 eV.
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关键词
quantum well,capacitance-voltage profiling,electrochemical profiling
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