Microwave graphitic nitrogen/boron ultradoping of graphene

Insufficient carrier concentration and lack of room temperature ferromagnetism in pristine graphene limit its dream applications in electronic and spintronic chips. While theoretical calculations have revealed that graphitic ultradoping can turn graphene into semiconducting and room temperature ferromagnetic, the exotic set of thermodynamic conditions needed for doping result in defects and functionalities in graphene which end up giving significant electronic scattering. We report our discovery of microwave ultradoping of graphene with N > 30%, B similar to 19%, and co-doping to form BCN phases (B5C73N22, B8C76N16, and B10C77N13). An unprecedented level of graphitic doping similar to 95% enhances carrier concentration up to similar to 9.2 x 10(12) cm(-2), keeping high electronic mobility similar to 9688 cm(2) V(-1)s(-1) intact, demonstrated by field effect transistor measurements. Room temperature ferromagnetic character with magnetization similar to 4.18 emug(-1) is reported and is consistent with our DFT band structure calculations. This breakthrough research on tunable graphitic ultradoping of 2D materials opens new avenues for emerging multi-functional technological applications.