Efficient Perovskite Photovoltaics by a Nanostructured Ga₂O₃ Hole-Blocking Layer

This research uses the SCAPS-1D simulation program to methodically enhance and numerically analyze perovskite solar cells that utilize a gallium oxide (Ga2O3) hole-blocking layer. To corroborate our calculations, we initially compared the current density-voltage properties (J-V) obtained from our SCAPS model to experimental results. Remarkably, the curve exhibited almost excellent alignment, exhibiting the precision and reliability of our analytical approach. We simulated a typical (n-i-p) architecture and carefully investigated the performance of various parameters for the electron transport layer and perovskite. We optimized the thicknesses of the perovskite and Ga2O3, doping concentration of Ga2O3, perovskite defect density, interface-trapped defects, series resistance, and shunt resistance. Through calculation, we successfully developed an efficient perovskite photovoltaic with the structure of FTO/Ga2O3/MAPbI(3)/spiro-OMeTAD/Au, yielding a champion performance of 28.19%. This modeling is beneficial for understanding the operational principles of MAPbI(3) photovoltaics. It also plays a crucial role in directing the fabrication of high-performance devices under laboratory conditions.