Solution Processed n plus CdS/ n-CdTe/ Perovskite Heterojunction Thin-film Solar Cells

Here we demonstrate Tec 10/n+ CdS/n-CdTe/perovskite/Au device structure with two different perovskite hole transport layers (HTL) namely CsPbBr3 and CsPtI3. InCl3-doped electrodeposited CdTe shows low carrier concentration of 3 x 10(15) cm(-3) measured using electrochemical capacitance profiling. CsPbBr3 and CsPtI3 exhibit a bandgap of 2.35 eV and 2.62 eV respectively and hole concentration on the order of 10(16) cm(-3). A device structure of chemical bath deposited CdS on Tec 10, In-doped CdTe, CsPbBr3 or CsPtI3 HTLs with Au contacts results in device efficiency of and 5.39% and 6.85% respectively. Future research includes CdTe grain boundary and interface passivation, and tailoring perovskite HTL bandgap, thickness, and passivation to enable ultra-thin bifacial CdTe solar cells.