Optical properties and dynamics of direct and spatially and momentum indirect excitons in AlGaAs/AlAs quantum wells
arxiv(2024)
摘要
We present an experimental study on optical properties and dynamics of direct
and spatially and momentum indirect excitons in AlGaAs/AlAs quantum wells near
the crossover between - and X-valley confined electron states. The
time-integrated photoluminescence experiment at T=4.8 K revealed three
simultaneously observed optical transitions resulting from (a) a direct exciton
recombination, involving an electron and a hole states both located in the
-valley in the quantum well layer, and (b) two spatially and
momentum indirect excitons, comprising of the confined electron states in the
X-valley in the AlAs barrier with different effective masses and quantum well
holes in the -valley. The measured spatial extent, density
dependence and temperature dependence of the structure photoluminescence
revealed characteristics necessary to pinpoint the states' nature and provided
their characterization crucial in future device design. Temporal dynamics
observed in the time-resolved photoluminescence measurement showed the
complexity of the capture and recombination dynamics, largely affected by
nonradiative processes, what is additionally critical in the system's use. This
solid state platform hosting both direct and indirect excitons in a highly
tunable monolithic system can benefit and underline the operation principles of
novel electronic and photonic devices.
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