Area-selective atomic layer deposition (AS-ALD) of low temperature (300 °C) cobalt thin film using octadecyltrichlorosilane (ODTS) self-assembled monolayers (SAMs)
Applied Surface Science(2024)
摘要
As the semiconductor industry advances, manufacturing technologies encounter challenges in achieving precise alignment and thickness control with smaller and more intricate 3D structures. Addressing this, Area-selective atomic layer deposition (AS-ALD) emerges as a promising “bottom-up” approach, offering an alternative to current nano-patterning techniques. To achieve AS-ALD, self-assembled monolayers (SAMs) are employed as inhibitor agents. In this study, we employed plasma-enhanced atomic layer deposition (PEALD) to promote self-limiting surface reactions and enable low-temperature processing, thereby facilitating the implementation of high purity cobalt (Co) film through AS-ALD using octadecyltrichlorosilane (ODTS) SAM as an inhibitor. The selective deposition is achieved by employing SAMs as an inhibitor, belonging to the deactivation process, a common method for realizing a bottom-up approach. SAMs can form a thin organic film on a solid surface, allowing for surface modifications to become hydrophobic or hydrophilic. Through the selective deposition of Co in the PEALD low-temperature process (300 °C), we successfully addressed the degradation issue of ODTS SAM and verified the successful achievement of a high-purity selectively deposited 13.4 nm Co film. Our findings highlight the potential of selective Co deposition for realizing complex 3D structures and narrow interconnection layers.
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关键词
AS-ALD,PEALD,Cobalt,ODTS,SAM
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