Gate-Tunable Quantum Acoustoelectric Transport in Graphene

Yicheng Mou, Haonan Chen, Jiaqi Liu, Qing Lan,Jiayu Wang,Chuanxin Zhang,Yuxiang Wang, Jiaming Gu, Tuoyu Zhao,Xue Jiang,Wu Shi,Cheng Zhang

NANO LETTERS(2024)

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摘要
Transport probes the motion of quasi-particles in response to external excitations. Apart from the well-known electric and thermoelectric transport, acoustoelectric transport induced by traveling acoustic waves has rarely been explored. Here, by adopting hybrid nanodevices integrated with piezoelectric substrates, we establish a simple design of acoustoelectric transport with gate tunability. We fabricate dual-gated acoustoelectric devices based on hBN-encapsulated graphene on LiNbO3. Longitudinal and transverse acoustoelectric voltages are generated by launching a pulsed surface acoustic wave. The gate dependence of zero-field longitudinal acoustoelectric signal presents strikingly similar profiles to that of Hall resistivity, providing a valid approach for extracting carrier density without magnetic field. In magnetic fields, acoustoelectric quantum oscillations appear due to Landau quantization, which are more robust and pronounced than Shubnikov-de Haas oscillations. Our work demonstrates a feasible acoustoelectric setup with gate tunability, which can be extended to the broad scope of various van der Waals materials.
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关键词
acoustoelectric transport,quantum oscillations,gate tunability,graphene,Landau levels
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