A Novel Group-Division-Multiplexing Complementary Symmetric Reference Sensing Scheme for MRAM
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS（2024）
关键词
Sensors,Microprocessors,Magnetic tunneling,Voltage,Bit error rate,Transistors,Resistance,MRAM,VGSOT-MRAM,complementary symmetric reference sensing scheme,low-power,low access latency
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