Interfacial magnetic spin Hall effect in van der Waals Fe3GeTe2/MoTe2 heterostructure
arxiv(2024)
摘要
The spin Hall effect (SHE) allows efficient generation of spin polarization
or spin current through charge current and plays a crucial role in the
development of spintronics. While SHE typically occurs in non-magnetic
materials and is time-reversal even, exploring time-reversal-odd (T-odd) SHE,
which couples SHE to magnetization in ferromagnetic materials, offers a new
charge-spin conversion mechanism with new functionalities. Here, we report the
observation of giant T-odd SHE in Fe3GeTe2/MoTe2 van der Waals heterostructure,
representing a previously unidentified interfacial magnetic spin Hall effect
(interfacial-MSHE). Through rigorous symmetry analysis and theoretical
calculations, we attribute the interfacial-MSHE to a symmetry-breaking induced
spin current dipole at the vdW interface. Furthermore, we show that this linear
effect can be used for implementing multiply-accumulate operations and binary
convolutional neural networks with cascaded multi-terminal devices. Our
findings uncover an interfacial T-odd charge-spin conversion mechanism with
promising potential for energy-efficient in-memory computing.
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