Reverse intersystem crossing mechanisms in doped triangulenes

Thermally activated delayed fluorescence (TADF) has emerged as one of the most promising strategies in the quest for organic light emitting diodes with optimal performance. This computational study dissects the mechanistic intricacies of the central photophysical step, reverse intersystem crossing (rISC) in N and B doped triangulenes as potential multi-resonance TADF compounds. Optimal molecular patterns conducive to efficient rISC, encompassing dopant atom size, number, and distribution, are identified. Additionally, we assess various electronic structure methods for characterizing TADF-relevant molecular systems. The findings identify the distinct role of the direct and mediated mechanisms in rISC, and provide insights into the design of advanced TADF chromophores for next-generation OLED technology. Electronic structure calculations suggest that reverse intersystem crossing in B and N-doped triangulenes can occur via both direct (spin-orbit coupling) and mediated (spin-vibronic coupling) mechanisms.