Orbital-doublet-driven even spin Chern insulators
arxiv(2024)
摘要
Quantum spin Hall insulators hosting edge spin currents hold great potential
for low-power spintronic devices. In this work, we present a universal approach
to achieve a high and near-quantized spin Hall conductance plateau within a
sizable bulk gap. Using a nonmagnetic four-band model Hamiltonian, we
demonstrate that an even spin Chern (ESC) insulator can be accessed by tuning
the sign of spin-orbit coupling (SOC) within a crystal symmetry-enforced
orbital doublet. With the assistance of a high spin Chern number of C_S=2
and spin U(1) quasi-symmetry, this orbital-doublet-driven ESC phase is
endowed with the near-double-quantized spin Hall conductance. We identify 12
crystallographic point groups supporting such a sign-tunable SOC. Furthermore,
we apply our theory to realistic examples, and show the phase transition from a
trivial insulator governed by positive SOC in RuI_3 monolayer to an ESC
insulator dominated by negative SOC in RuBr_3 monolayer. This
orbital-doublet-driven ESC insulator, RuBr_3, showcases nontrivial
characteristics including helical edge states, near-double-quantized spin Hall
conductance, and robust corner states. Our work provides new pathways in the
pursuit of the long-sought quantum spin Hall insulators.
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