Accounting for Carrier Mobility Reduction Due to the Normal Field in the Saturation Current Modeling of Extrinsic MOSFETs

V. O. Turin, Y. V. Ilyushina,M. A. Shcherbina, B. A. Rakhmatov,G. I. Zebrev, S. A. Kokin, S. V. Makarov

Russian Microelectronics（2024）

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关键词

intrinsic and extrinsic MOSFET,compact modeling,mobility reduction due to the normal field,saturation current,transconductance

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