Investigation of Low Energy Electron Irradiated SiO2 Based MOS Devices by Capacitance-Voltage and Thermally Stimulated Current Techniques

Silicon oxide based and aluminum gated MOS structures fabricated on n-type silicon are investigated after irradiation with low energy electrons in scanning electron microscope. The thermally stimulated current (TSC) technique in the temperature range from 80 K to 320 K revealed a number of the electron beam induced charge traps. With the help of the capacitance-voltage method, the traps revealed by the TSC were identified by their location (within dielectric, semiconductor or at the interface) and by their nature (trap for electrons or for holes).