Temperature coefficient of resistance and thermal boundary conductance determination of ruthenium thin films by micro four-point probe

Abstract Accurate characterization of the temperature coefficient of resistance (αTCR) of electrically conductive materials is pertinent for reducing self-heating in electronic devices. In-situ non-destructive measurements of αTCR using the micro four-point probe (M4PP) technique have previously been demonstrated on platinum (Pt) thin films deposited on fused silica, assuming the thermal conductivity of the substrate as known. In this study, we expand the M4PP method to obtain the αTCR on industrially relevant stacks, comprising ruthenium (Ru) thin films (3.3 nm and 5.2 nm thick) deposited on bulk silicon (Si), separated by a 90 nm SiO2 spacer. The new M4PP methodology allows simultaneous determination of both αTCR and the total thermal boundary conductance (GTBC) between the metallic film and its substrate. We measured the αTCR and the GTBC to be 542±18 ppm/K and 15.6±1.3 MW/m2K for 3.3 nm Ru, and 982±46 ppm/K and 19.3±2.3 MW/m2K for 5.2 nm Ru. This is in good agreement with independent measurements of αTCR. Our methodology demonstrates the potential of M4PP to characterize thermal properties of metallic thin films used in semiconductor technology.